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2SB765 Datasheet - INCHANGE

2SB765 PNP Transistor

*High DC Current Gain- : hFE = 1000(Min)@ IC= -1.5A *Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -1.5A *Complement to Type 2SD864 *Minimum Lot-to-Lot variations for robust device performance .

2SB765-INCHANGE.pdf

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Datasheet Details

Part number:

2SB765

Manufacturer:

INCHANGE

File Size:

210.43 KB

Description:

Pnp transistor.

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2SB765 2SB765 PNP Transistor INCHANGE

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