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2SB765 PNP Transistor

2SB765 Description

isc Silicon PNP Darlington Power Transistor 2SB765 .
High DC Current Gain- : hFE = 1000(Min)@ IC= -1. Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min). Low Collector-Emitter S.

2SB765 Applications

* Medium speed and power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-P

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Datasheet Details

Part number
2SB765
Manufacturer
INCHANGE
File Size
210.43 KB
Datasheet
2SB765-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE 2SB765-like datasheet