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2SC3307 - NPN Transistor

2SC3307 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

2SC3307 Applications

* High speed and high voltage switching applications.
* Switching regulator applications.
* High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter

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Datasheet Details

Part number
2SC3307
Manufacturer
INCHANGE
File Size
213.29 KB
Datasheet
2SC3307-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC3307-like datasheet