* Low Collector-to-Emitter Saturation Voltage Excllent Linearity of hFE High fT Fast Switching Time TO-251 CLASSIFICATION OF hFE Product-Rank 2SC3303-O Range 70~140 2SC3303-Y 120~240 A B GE K F C D H Collector 2 MJ P 1 Base 3 Emitter REF. A B C D E F Millimeter Min. Max. 6.35 6.80 4.90
2SC3303
SeCoS
78.42 KB
Npn epitaxial planar silicon transistor.
Elektronische Bauelemente
2SC3303
5A , 100V NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead.
📁 Related Datasheet
2SC3300 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
2SC3300
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-
:.
2SC3300 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon NPN Power Transistors
2SC3300
DESCRIPTION ·With TO-3PN package ·Low satur.
2SC3301 - Silicon NPN Transistor
(Toshiba)
:
SILICON NPN EPITAXIAL PLANAR TYPE
2SC3301
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES . NF=1.7dB, lS21el 2=14.5dB (f=500MHz) . NF=2.3d.
2SC3302 - Silicon NPN Transistor
(Toshiba Semiconductor)
:
SILICON NPN EPITAXIAL PLANAR TYPE
VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES . NF=1.5dB, 1 S21el 2=16.5dB (f=500MHz)
. NF=1.7dB, IS 2 l.
2SC3303 - SILICON NPN TRANSISTOR
(Toshiba Semiconductor)
2SC3303
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3303
High Current Switching Applications DC-DC Converter Applications
Indust.
2SC3303 - Silicon NPN Transistor
(GME)
Silicon NPN Epitaxial Type
FEATURES
Low collector saturation voltage: VCE(sat)=0.4V(max)(IC=3A).
High speed switching time:tstg=1us(typ).
Pb
Lea.
2SC3303 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% aval.
2SC3306 - NPN Transistor
(Toshiba Semiconductor)
.
