Part number:
2SC3650
Manufacturer:
SeCoS
File Size:
264.10 KB
Description:
Npn silicon epitaxial planar transistor.
* Small Flat Package. Large Current Capacity. High DC Current Gain Low VCE(sat) RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 123 A EC 4 APPLICATION LF Amplifiers, Various Drivers, Muting Circuit MARKING CF PACKAGE INFORMATION Package MPQ SOT-89 1K Leader Size
2SC3650
SeCoS
264.10 KB
Npn silicon epitaxial planar transistor.
📁 Related Datasheet
2SC3650 - General-Purpose Amplifier
(GME)
Production specification
High hFE,Low-Frequency General-Purpose Amplifier Applications
FEATURES
Pb
High DC current gain.
Lead-free
Low colle.
2SC3650 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number : EN1780B
2SC3650
SANYO Semiconductors
DATA SHEET
2SC3650
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency General-P.
2SC3650 - Transistor
(Kexin)
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor 2SC3650
Features
High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
2SC3650 - Transistor
(Jin Yu Semiconductor)
2SC3650
SOT-89-3L
TRANSISTOR (NPN)
FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amp.
2SC3650 - NPN Transistor
(WEJ)
RoHS 2SC3650
2SC3650 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 1.2 A Collector-base voltage
.
2SC3651 - NPN Transistor
(Sanyo Semicon Device)
Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
.
2SC3651 - Transistor
(Kexin)
SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors 2SC3651
Features
High DC current gain High breakdown voltage Low colleotor-to- emitter.
2SC3652 - SILICON NPN EPITAXIAL TRANSISTOR
(Hitachi Semiconductor)
2SC3652
Silicon NPN Epitaxial
Application
High frequency amplifier
Outline
TO-126 MOD
123
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings.
