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2SC3659 Silicon NPN Power Transistors

2SC3659 Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCES= 1700V (Min). Built-in Damper Didoe. Minimum Lot-to-Lot variations for robust device performance and relia.

2SC3659 Applications

* Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W

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Datasheet Details

Part number
2SC3659
Manufacturer
Inchange Semiconductor
File Size
188.10 KB
Datasheet
2SC3659_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

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Silicon NPN Power Transistors Inchange Semiconductor
Inchange Semiconductor 2SC3659-like datasheet