2SC3659 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCES= 1700V (Min). Built-in Damper Didoe. Minimum Lot-to-Lot variations for robust device performance and relia.

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Datasheet Specifications

Part number: 2SC3659
Manufacturer: Inchange Semiconductor
File Size: 188.10 KB
Datasheet: 2SC3659_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for high voltage, high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A PC Collector Power Dissipation @ TC=25℃ 50 W

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2SC3659 Silicon NPN Power Transistors Inchange Semiconductor

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