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2SC3619

Silicon NPN Power Transistors

2SC3619 General Description


*High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min)
*Good Linearity of hFE
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*High voltage switching and amplifier applications.
*Color TV horizontal driver applications. <.

2SC3619 Datasheet (191.10 KB)

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Datasheet Details

Part number:

2SC3619

Manufacturer:

Inchange Semiconductor

File Size:

191.10 KB

Description:

Silicon npn power transistors.

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2SC3619 Silicon NPN Power Transistors Inchange Semiconductor

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