2SC3619 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SC3619
Manufacturer: Inchange Semiconductor
File Size: 191.10 KB
Datasheet: 2SC3619_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* High voltage switching and amplifier applications.
* Color TV horizontal driver applications.
* Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emit

2SC3619 Distributors

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2SC3619 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SC3619-like datasheet