2SC3619 Datasheet - Inchange Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

2SC3619 Silicon NPN Power Transistors

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device p.

2SC3619_InchangeSemiconductor.pdf

2SC3619 Datasheet Preview — Preview of 2SC3619 PDF

Datasheet Details

Part number:

2SC3619

Manufacturer:

Inchange Semiconductor

File Size:

191.10 KB

Description:

Silicon NPN Power Transistors

Applications

* High voltage switching and amplifier applications.
* Color TV horizontal driver applications.
* Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emit

2SC3619 Distributors

📁 Related Datasheet

2SC3611 2SC3613 2SC3615 2SC3616 2SC3617 2SC3618

📌 All Tags

2SC3619 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SC3619-like datasheet