2SC3601 - PNP / NPN Epitaxial Planar Silicon Transistors

Product Overview

Sanyo Semicon Device

Part number	2SC3601
Manufacturer	Sanyo Semicon Device
File Size	48.35 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3601 Datasheet
Additional preview pages of the 2SC3601 datasheet.

High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( ) : 2SA1407 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipatio.

📁 Similar Datasheet

2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3604 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3605 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)
2SC3606 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC3607 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC3608 - Transistor (ETC)
2SC3611 - Silicon NPN Transistor (Panasonic Semiconductor)
2SC3613 - NPN Transistor (Toshiba Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |