* High fT : fT typ=400MHz. High breakdown voltage : VCEO≥200V. Small reverce transfer capacitance and excellent high frequency characteristics : Cre=2.0pF(NPN), 2.5pF(PNP). Complementary PNP and NPN types. Adoption of FBET process. Specifications ( )
2SC3601
Sanyo Semicon Device
48.35 KB
Pnp / npn epitaxial planar silicon transistors.
Ordering number : EN1766D
2SA1407 / 2SC3601
SANYO Semiconductors
DATA SHEET
PNP / NPN Epitaxial Planar Silicon Transistors
2SA1407 / 2SC3601
Appli.
📁 Related Datasheet
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Ordering number:ENN1765B
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DATA SHEET
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2SC3603
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The 2SC3603 is an NPN epitaxial transi.
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DATA SHEET
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2SC3604
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transi.
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Free Datasheet http://../
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(Toshiba Semiconductor)
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC3605
2SC3605
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
FEATURES:
l Low Noise Figure, Hig.
2SC3606 - Silicon NPN Transistor
(Toshiba Semiconductor)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3606
2SC3606
VHF~UHF Band Low Noise Amplifier Applications
Unit: mm
· Low noise figure, hi.
2SC3606 - NPN Transistors
(Kexin)
SMD Type
Transistors
NPN Transistors 2SC3606
■ Features
● Collector Current Capability IC=80mA ● Collector Emitter Voltage VCEO=12V
+0.12.4 -0.1
S.
2SC3607 - Silicon NPN Transistor
(Toshiba Semiconductor)
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2SC3607
2SC3607
VHF~UHF Band Low Noise Amplifier Applications
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· Low noise figure, hi.
