* Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz
* High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temp
2SC3604
NEC
94.47 KB
Npn epitaxial silicon transistor.
DATA SHEET
SILICON TRANSISTOR
2SC3604
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transi.
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(Toshiba Semiconductor)
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2SC3605
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(Toshiba Semiconductor)
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S.
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