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2SC3605 - Silicon NPN Epitaxial Planar Type Transistor

Datasheet Summary

Features

  • l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz) Unit in mm.

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Datasheet Details

Part number 2SC3605
Manufacturer Toshiba Semiconductor
File Size 237.97 KB
Description Silicon NPN Epitaxial Planar Type Transistor
Datasheet download datasheet 2SC3605 Datasheet
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Full PDF Text Transcription

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: l Low Noise Figure, High Gain l NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz) Unit in mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 20 12 3 80 40 600 150 −55~150 UNIT V V V mA mA mW °C °C MICROWAVE CHARACTERISTICS (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 0.
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