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2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR

Datasheet Summary

Features

  • Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz.
  • High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B.

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Datasheet preview – 2SC3603

Datasheet Details

Part number 2SC3603
Manufacturer NEC
File Size 89.68 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet 2SC3603 Datasheet
Additional preview pages of the 2SC3603 datasheet.

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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. PACKAGE DIMENSIONS (in mm) E 3.8 MIN. FEATURES • Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz • High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN.
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