* Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
* High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temp
2SC3603
NEC
89.68 KB
Npn epitaxial silicon transistor.
DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transi.
📁 Related Datasheet
2SC3600 PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3601 PNP / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3604 NPN EPITAXIAL SILICON TRANSISTOR (New Jersey Semi-Conductor)
2SC3605 Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)
2SC3606 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3606 NPN Transistors (Kexin)
2SC3607 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3608 Transistor (ETC)
2SC3611 Silicon NPN Transistor (Panasonic Semiconductor)
