2SC3603 NPN EPITAXIAL SILICON TRANSISTOR

NEC

Description

DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transi.

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Datasheet Specifications

Part number: 2SC3603
Manufacturer: NEC
File Size: 89.68 KB
Datasheet: 2SC3603_NEC.pdf
Description: NPN EPITAXIAL SILICON TRANSISTOR

Features

* Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz
* High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temp

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

2SC3603 Distributors

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2SC3603 NPN EPITAXIAL SILICON TRANSISTOR NEC

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