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2SC3636

NPN Triple Diffused Planar Silicon Transistor

2SC3636 Features

* High reliability (Adoption of HVP process).

* Fast speed.

* High breakdown voltage.

* Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3636] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt

2SC3636 Datasheet (115.91 KB)

Preview of 2SC3636 PDF

Datasheet Details

Part number:

2SC3636

Manufacturer:

Sanyo Semicon Device

File Size:

115.91 KB

Description:

Npn triple diffused planar silicon transistor.
Ordering number:EN1614C NPN Triple Diffused Planar Silicon Transistor 2SC3636 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.

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2SC3636 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device

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