2SC3631 Datasheet - NEC

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2SC3631 NPN SILICON TRIPLE DIFFUSED TRANSISTOR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Cor.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

2SC3631_NEC.pdf

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Datasheet Details

Part number:

2SC3631

Manufacturer:

NEC

File Size:

742.40 KB

Description:

NPN SILICON TRIPLE DIFFUSED TRANSISTOR

Features

* High Voltage VCEO = 400 V
* High Speed tf < 0.7 μs
* Complement to 2SA1412-Z Note 5.6 ±0.3 9.5 ±0.5 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Ba

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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2SC3631 NPN SILICON TRIPLE DIFFUSED TRANSISTOR NEC

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