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2SC3631 Datasheet - NEC

2SC3631 NPN SILICON TRIPLE DIFFUSED TRANSISTOR

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: .

2SC3631 Features

* High Voltage VCEO = 400 V

* High Speed tf < 0.7 μs

* Complement to 2SA1412-Z Note 5.6 ±0.3 9.5 ±0.5 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Ba

2SC3631 Datasheet (742.40 KB)

Preview of 2SC3631 PDF

Datasheet Details

Part number:

2SC3631

Manufacturer:

NEC

File Size:

742.40 KB

Description:

Npn silicon triple diffused transistor.

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2SC3631 NPN SILICON TRIPLE DIFFUSED TRANSISTOR NEC

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