2SC3637 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3637
Manufacturer	Sanyo Semicon Device
File Size	115.86 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3637_SanyoSemiconDevice.pdf

High reliability (Adoption of HVP process).
Fast speed.
High breakdown voltage.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3637] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical.

📁 2SC3637 Similar Datasheet

2SC3630 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
2SC3631 - NPN SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
2SC3631-Z - NPN Transistor (NEC)
2SC3632 - NPN Transistor (INCHANGE)
2SC3632-Z - NPN Transistor (NEC)
2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3604 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3605 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |