* High reliability (Adoption of HVP process).
* Fast speed.
* High breakdown voltage.
* Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3637] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt
2SC3637
Sanyo Semicon Device
115.86 KB
Npn triple diffused planar silicon transistor.
Ordering number:EN1615C
NPN Triple Diffused Planar Silicon Transistor
2SC3637
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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