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2SC3638 Datasheet - Sanyo Semicon Device

2SC3638 NPN Triple Diffused Planar Silicon Transistor

2SC3638 Features

* High reliability (Adoption of HVP process).

* Fast speed.

* High breakdown voltage.

* Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3638] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt

2SC3638 Datasheet (114.31 KB)

Preview of 2SC3638 PDF

Datasheet Details

Part number:

2SC3638

Manufacturer:

Sanyo Semicon Device

File Size:

114.31 KB

Description:

Npn triple diffused planar silicon transistor.

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2SC3638 NPN Triple Diffused Planar Silicon Transistor Sanyo Semicon Device

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