2SC3640 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min). Fast Speed. High reliability. Adoption of MBIT process. Minimum.

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Datasheet Specifications

Part number: 2SC3640
Manufacturer: Inchange Semiconductor
File Size: 198.62 KB
Datasheet: 2SC3640-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector

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2SC3640 Silicon NPN Power Transistor Inchange Semiconductor

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