2SC3649 - PNP/NPN Epitaxial Planar Silicon Transistors

Sanyo Semicon Device

Datasheet Details

Part number	2SC3649
Manufacturer	Sanyo Semicon Device
File Size	44.58 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet	2SC3649_SanyoSemiconDevice.pdf

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Ultrasmall size making it easy to provide high- density hybrid ICs. Package Dimensions unit:mm 2038A [2SA1419/2SC3649] 4.5 1.6 1.5 1.0 2.5 4.25max ( ) : 2SA1419 Specifications Absolute Maximum Ratings at Ta = 25˚C 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collect.

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Published: Mar 22, 2005 |