2SC3644 - NPN Triple Diffused Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3644
Manufacturer	Sanyo Semicon Device
File Size	119.05 KB
Description	NPN Triple Diffused Planar Silicon Transistor
Datasheet	2SC3644_SanyoSemiconDevice.pdf

High reliability (Adoption of HVP process).
High speed.
High breakdown voltage.
Adoption of MBIT process. Package Dimensions unit:mm 2022A [2SC3644] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C Conditions Electrical.

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Published: Mar 22, 2005 |