2SC3647 - PNP / NPN Epitaxial Planar Silicon Transistor

Sanyo Semicon Device

Datasheet Details

Part number	2SC3647
Manufacturer	Sanyo Semicon Device
File Size	260.18 KB
Description	PNP / NPN Epitaxial Planar Silicon Transistor
Datasheet	2SC3647_SanyoSemiconDevice.pdf

Adoption of FBET, MBIT processes.
High breakdown voltage and large current capacity.
Fast switching speed.
Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Speciﬁcations ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperatu.

📁 2SC3647 Similar Datasheet

2SC3640 - Silicon NPN Power Transistor (Inchange Semiconductor)
2SC3649 - Bipolar Transistor (ON Semiconductor)
2SC3603 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3604 - NPN EPITAXIAL SILICON TRANSISTOR (NEC)
2SC3605 - Silicon NPN Epitaxial Planar Type Transistor (Toshiba Semiconductor)
2SC3606 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC3607 - Silicon NPN Transistor (Toshiba Semiconductor)
2SC3608 - Transistor (ETC)

Other Datasheets by Sanyo Semicon Device

Published: Mar 22, 2005 |