2SC3637 Datasheet - Inchange Semiconductor

2SC3637, Silicon NPN Power Transistors

isc Silicon NPN Power Transistor 2SC3637 .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min). High Switching Speed. Wide Area of Safe Operation. Minimum Lot-to-.

datasheet Preview Page 1 from Datasheet4u.com

2SC3637_InchangeSemiconductor.pdf

2SC3637 Datasheet Preview — Preview of 2SC3637 PDF

Datasheet Details

Part number:

2SC3637

Manufacturer:

Inchange Semiconductor

File Size:

198.08 KB

Description:

Silicon NPN Power Transistors

Applications

* Designed for ultrahigh-definition CRT display horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Cont

2SC3637 Distributors

📁 Related Datasheet

2SC3630 2SC3631 2SC3631-Z 2SC3632 2SC3632-Z 2SC3636

📌 All Tags

2SC3637 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SC3637-like datasheet