2SC3627 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device pe.

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Datasheet Specifications

Part number: 2SC3627
Manufacturer: Inchange Semiconductor
File Size: 196.42 KB
Datasheet: 2SC3627_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Switching regulator and high voltage switching applications
* High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collec

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2SC3627 Silicon NPN Power Transistors Inchange Semiconductor

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