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2SC3623 - NPN SILICON TRANSISTOR

Datasheet Summary

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA.
  • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA.
  • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A).

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Datasheet Details

Part number 2SC3623
Manufacturer NEC
File Size 125.18 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet 2SC3623 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTORS 2SC3623, 3623A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg Ratings 2SC3623 2SC3623A 60 50 12 15 150 250 150 −55 to +150 Unit V V V mA mW °C °C PACKAGE DRAWING (UNIT: mm) Electrode connection 1. Emitter (E) 2. Collector (C) 3.
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