Description
DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW *FREQUENCY POWER AMPLIFIERS AND SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.
Features
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PACKAGE DRAWING (UNIT: mm)
* High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA
* Low VCE(sat):
* High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Coll
Applications
* of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and v
