Datasheet4U Logo Datasheet4U.com

2SC3636 - Silicon NPN Power Transistors

📥 Download Datasheet

Preview of 2SC3636 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SC3636
Manufacturer Inchange Semiconductor
File Size 198.53 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2SC3636_InchangeSemiconductor.pdf

2SC3636 Product details

Description

High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V(Min) High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ultrahigh-definition CRT display horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7

📁 2SC3636 Similar Datasheet

  • 2SC3630 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)
  • 2SC3631 - NPN SILICON TRIPLE DIFFUSED TRANSISTOR (NEC)
  • 2SC3631-Z - NPN Transistor (NEC)
  • 2SC3632 - NPN Transistor (INCHANGE)
  • 2SC3632-Z - NPN Transistor (NEC)
  • 2SC3637 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3638 - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
  • 2SC3600 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
Other Datasheets by Inchange Semiconductor
Published: |