Part number:
2SC3657
Manufacturer:
Inchange Semiconductor
File Size:
201.74 KB
Description:
Silicon npn power transistors.
2SC3657
Inchange Semiconductor
201.74 KB
Silicon npn power transistors.
📁 Related Datasheet
2SC3650 - General-Purpose Amplifier
(GME)
Production specification
High hFE,Low-Frequency General-Purpose Amplifier Applications
FEATURES
Pb
High DC current gain.
Lead-free
Low colle.
2SC3650 - NPN Epitaxial Planar Silicon Transistor
(Sanyo Semicon Device)
Ordering number : EN1780B
2SC3650
SANYO Semiconductors
DATA SHEET
2SC3650
NPN Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency General-P.
2SC3650 - Transistor
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SMD Type
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NPN Epitaxial Planar Silicon Transistor 2SC3650
Features
High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur.
2SC3650 - NPN Silicon Epitaxial Planar Transistor
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Elektronische Bauelemente
2SC3650
1.2 A , 30 V NPN Plastic-Encapsulate Transistor
FEATURES
Small Flat Package. Large Current Capacity. High DC Curre.
2SC3650 - Transistor
(Jin Yu Semiconductor)
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SOT-89-3L
TRANSISTOR (NPN)
FEATURES Small Flat Package High DC Current Gain Low VCE(sat) Large Current Capacity APPLICATIONS LF Amp.
2SC3650 - NPN Transistor
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RoHS 2SC3650
2SC3650 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM:
0.5 W (Tamb=25℃)
.,LCollector current
ICM: 1.2 A Collector-base voltage
.
2SC3651 - NPN Transistor
(Sanyo Semicon Device)
Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
.
2SC3651 - Transistor
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SMD Type
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NPN Epitaxial Planar Silicon Transistors 2SC3651
Features
High DC current gain High breakdown voltage Low colleotor-to- emitter.
