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2SC3651 - NPN Transistor

Sanyo Semicon Device

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Datasheet Details

Part number	2SC3651
Manufacturer	Sanyo Semicon Device
File Size	88.94 KB
Description	NPN Transistor
Datasheet	2SC3651_SanyoSemiconDevice.pdf

2SC3651 Product details

Features

High DC current gain (hFE=500 to 2000).
High breakdown voltage (VCEO≥100V).
Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
High VEBO (VEBO≥15V).
Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2038 [2SC3651] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Puls.

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Other Datasheets by Sanyo Semicon Device

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Published: Mar 22, 2005 |