2SC3651 Datasheet - Sanyo Semicon Device

2SC3651 NPN Transistor

2SC3651 Features

* High DC current gain (hFE=500 to 2000).

* High breakdown voltage (VCEO≥100V).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V).

* Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2

Datasheet Details

2SC3651

Sanyo Semicon Device

88.94 KB

Npn transistor.

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2SC3651 NPN Transistor Sanyo Semicon Device

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