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2SC3651

NPN Transistor

2SC3651 Features

* High DC current gain (hFE=500 to 2000).

* High breakdown voltage (VCEO≥100V).

* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).

* High VEBO (VEBO≥15V).

* Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2

2SC3651 Datasheet (88.94 KB)

Preview of 2SC3651 PDF

Datasheet Details

Part number:

2SC3651

Manufacturer:

Sanyo Semicon Device

File Size:

88.94 KB

Description:

Npn transistor.
Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications .

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2SC3651 NPN Transistor Sanyo Semicon Device

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