2SC3651 NPN Transistor

Sanyo Semicon Device

Description

Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications .

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Datasheet Specifications

Part number: 2SC3651
Manufacturer: Sanyo Semicon Device
File Size: 88.94 KB
Datasheet: 2SC3651_SanyoSemiconDevice.pdf
Description: NPN Transistor

Features

* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V).
* Very small size making it easy to provide high- density, small-sized hybrid IC’s. Package Dimensions unit:mm 2

Applications

* Applications

2SC3651 Distributors

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2SC3651 NPN Transistor Sanyo Semicon Device

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