2SC4448 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4448 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min). High DC Current Gain. 100% avalanche tested. Minimum Lot-to-Lot variation.

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Datasheet Specifications

Part number: 2SC4448
Manufacturer: INCHANGE
File Size: 177.54 KB
Datasheet: 2SC4448-INCHANGE.pdf
Description: NPN Transistor

Applications

* Chroma output applications for HDTV
* Video output applications for high resolution display ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current

2SC4448 Distributors

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2SC4448 NPN Transistor INCHANGE

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