2SC4442 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4442 .
Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min. Wide Area of Safe Operation. High Speed Switching. 100% avalanc.

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Datasheet Specifications

Part number: 2SC4442
Manufacturer: Inchange Semiconductor
File Size: 180.92 KB
Datasheet: 2SC4442_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Con

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2SC4442 Silicon NPN Power Transistor Inchange Semiconductor

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