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2SC4003 Silicon NPN Power Transistor

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Description

isc Silicon NPN Power Transistor .
High hFE. Low collector-to-emitter saturation voltage. 100% avalanche tested. Minimum Lot-to-Lot variations for robust device perform.

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Datasheet Specifications

Part number
2SC4003
Manufacturer
Inchange Semiconductor
File Size
251.81 KB
Datasheet
2SC4003-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.2 A PC Collector Power Dissipation 1.0 W TJ

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