Datasheet Details
| Part number | 2SC4007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.65 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4007_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC4007.
| Part number | 2SC4007 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.65 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SC4007_InchangeSemiconductor.pdf |
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·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 6 A 40 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC4007 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA;
IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 50μA;
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