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NPN Epitaxial Planar Silicon Transistor
FEATURES
High hFE hFE=60 to 200. Low VCE(sat)=0.6V.
Pb
Lead-free
Production specification
2SC4003
TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO VCEO
Collector-Base Volage Collector-Emitter Voltage
400 V 400 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current(DC)
0.2 A
PC Collector Power Dissipation
1W
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
V/(W)014 Rev.A
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2SC4003 Datasheet
