Galaxy Century Microelectronics 2SC4003
NPN Epitaxial Planar Silicon Transistor
| Part No. | 2SC4003 |
|---|---|
| Datasheet | 2SC4003 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Epitaxial Planar Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● High hFE hFE=60 to 200.● Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.2 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)014 Rev.A 1 Production specification NPN Epitaxial Planar Silicon Transistor 2SC4003
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage VCBO VCEO VEBO IC=10uA,Ie=0 IC=1mA,IB=0 IE=10uA,IC=0 400 400 5 Collector cut-off current ICBO VCB=300V,IE=0 0.1 UNIT V V V uA Emitter cut-off curren
