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2SC4003 - NPN Epitaxial Planar Silicon Transistor

Key Features

  • High hFE hFE=60 to 200.
  • Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252.

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NPN Epitaxial Planar Silicon Transistor FEATURES  High hFE hFE=60 to 200.  Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.2 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)014 Rev.A www.gmesemi.