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2SC4460 Silicon NPN Power Transistors

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Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : V(BR)CEO= 500V(Min). Fast Switching speed. Wide Area of Safe Operation. Minimum Lot-to-Lot variations for r.

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Datasheet Specifications

Part number
2SC4460
Manufacturer
Inchange Semiconductor
File Size
225.09 KB
Datasheet
2SC4460_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistors

Applications

* Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse

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