2SC4467 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4467 .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 120V(Min). Good Linearity of hFE. Complement to Type 2SA1694. 100% avalanche test.

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Datasheet Specifications

Part number: 2SC4467
Manufacturer: INCHANGE
File Size: 190.25 KB
Datasheet: 2SC4467-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current-Contin

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2SC4467 NPN Transistor INCHANGE

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