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2SC4960 NPN Transistor

2SC4960 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 .
High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min). High Switching Speed. 100% avalanche tested. Minimum Lot-to-Lot variati.

2SC4960 Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuou

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Datasheet Details

Part number
2SC4960
Manufacturer
INCHANGE
File Size
181.58 KB
Datasheet
2SC4960-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC4960-like datasheet