2SC4960 Datasheet - INCHANGE

2SC4960, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4960 DESCRIPTION *High Collector-Base Breakdown Voltage- : V(BR)CBO= 900V(Min) *H

Applications

* Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCES Collector-Emitter Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuou

2SC4960-INCHANGE.pdf