Datasheet4U Logo Datasheet4U.com

2SC4900

NPN TRANSISTOR

2SC4900 Features

* High gain bandwidth product fT = 9 GHz Typ

* High gain, low noise figure PG = 13.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK-4 2 3 1 4 1. Collector 2. Emitter 3. Base 4. Emitter 2SC4900 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to

2SC4900 Datasheet (47.35 KB)

Preview of 2SC4900 PDF

Datasheet Details

Part number:

2SC4900

Manufacturer:

Hitachi Semiconductor

File Size:

47.35 KB

Description:

Npn transistor.

📁 Related Datasheet

2SC4901 - NPN TRANSISTOR (Hitachi Semiconductor)
2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz Typ • High gain, low noise.

2SC4901 - Silicon NPN Transistor (Inchange Semiconductor)
isc Silicon NPN RF Transistor DESCRIPTION · High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V,IC=20mA,f=0.9GHz · High gain, low noise figure ︱S21.

2SC4901 - Silicon NPN Transistor (Renesas)
Preliminary Datasheet 2SC4901 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier R07DS0276EJ0400 (Previous: REJ03G0733-0300) Rev.4.00 M.

2SC4901YK - NPN Transistor (INCHANGE)
isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4901YK DESCRIPTION ·High gain bandwidth product fT = 9 GHz (Typ) @ VCE=5V,IC=20mA,f=0.9GHz ·.

2SC4905 - Silicon NPN Bipolar Transistor (Hitachi Semiconductor)
2SC4905 Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product fT = 5.8 GHz typ • High gain, .

2SC4907 - NPN TRANSISTOR (Sanken electric)
2SC4907 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VC.

2SC4907 - SILICON POWER TRANSISTOR (SavantIC)
.. SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4907 DESCRIPTION ·With TO-220F package ·High vo.

2SC4907 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4907 DESCRIPTION ·Collector–Emitter Breakdown Voltage : V(BR)CEO= 500V(Min.) ·High Speed .

TAGS

2SC4900 NPN TRANSISTOR Hitachi Semiconductor

Image Gallery

2SC4900 Datasheet Preview Page 2 2SC4900 Datasheet Preview Page 3

2SC4900 Distributor