2SD1289 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1289 .
Low Collector Saturation Voltage : VCE(sat)= 0. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Complement.

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Datasheet Specifications

Part number: 2SD1289
Manufacturer: INCHANGE
File Size: 198.66 KB
Datasheet: 2SD1289-INCHANGE.pdf
Description: NPN Transistor

Applications

* Audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse

2SD1289 Distributors

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2SD1289 NPN Transistor INCHANGE

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