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2SD1210 NPN Transistor

2SD1210 Description

isc Silicon NPN Darlington Power Transistor 2SD1210 .
High DC Current Gain : hFE= 1000(Min. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Minimum Lot-to-Lot variat.

2SD1210 Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Curren

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Datasheet Details

Part number
2SD1210
Manufacturer
INCHANGE
File Size
210.86 KB
Datasheet
2SD1210-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1210-like datasheet