2SD1210 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor 2SD1210 .
High DC Current Gain : hFE= 1000(Min. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Minimum Lot-to-Lot variat.

📥 Download Datasheet

2SD1210 Datasheet Preview — Preview of 2SD1210 PDF

Datasheet Specifications

Part number: 2SD1210
Manufacturer: INCHANGE
File Size: 210.86 KB
Datasheet: 2SD1210-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Curren

2SD1210 Distributors

📁 Related Datasheet

2SD1211 2SD1212 2SD1213 2SD1214 2SD1216 2SD1217

📌 All Tags

2SD1210 NPN Transistor INCHANGE

INCHANGE 2SD1210-like datasheet