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2SD1230 Silicon NPN Darlington Power Transistor

2SD1230 Description

isc Silicon NPN Darlington Power Transistor 2SD1230 .
High DC Current Gain : hFE= 1500(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min. Complement to Type.

2SD1230 Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collecto

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Datasheet Details

Part number
2SD1230
Manufacturer
INCHANGE
File Size
217.00 KB
Datasheet
2SD1230-INCHANGE.pdf
Description
Silicon NPN Darlington Power Transistor

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Silicon NPN Darlington Power Transistor INCHANGE
INCHANGE 2SD1230-like datasheet