* Low-saturation collector-to-emitter voltage : VCE(sat)=
* 0.5V (PNP), 0.4V (NPN) max.
* High current capacity. Package Dimensions unit:mm 2010C [2SB920L/2SD1236L] ( ) : 2SB920L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-
2SD1236L Datasheet (174.90 KB)
2SD1236L
Sanyo Semicon Device
174.90 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:1796B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB920L/2SD1236L
80V/5A Switching Applications
Applications
* Relay drivers, .
📁 Related Datasheet
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2SB920 / 2SD1236
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2SB920 / 2SD1236
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App.
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isc Silicon NPN Power Transistors
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isc Silicon NPN Power Transistors
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: VCE(sat)= 0.4V(Max)@ IC= 3A ·Large Current Capacity ·Comp.
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1236L
..
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(Sanyo Semicon Device)
Ordering number:1034B
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2SB913/2SD1230
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· Motor drivers, print.
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(INCHANGE)
isc Silicon NPN Darlington Power Transistor
2SD1230
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdow.
2SD1233 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain
: hFE= 1500(Min.)@ IC= 4A, VCE= 3V ·Collector-Emitter Breakdown Voltage.
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(Sanyo Semicon Device)
Ordering number:1046B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB919/2SD1235
30V/8A High-Speed Switching Applications
Applications
· Large curr.
