2SD1233 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 1500(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min. Minimum Lot-to-Lot.

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Datasheet Specifications

Part number: 2SD1233
Manufacturer: Inchange Semiconductor
File Size: 206.98 KB
Datasheet: 2SD1233_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collect

2SD1233 Distributors

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2SD1233 Power Transistor Inchange Semiconductor

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