2SD103 Silicon NPN Power Transistors

Inchange Semiconductor

Description

isc Silicon NPN Power Transistors 2SD103 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). High Power Dissipation- : PC= 25W(Max)@TC=25℃. Complement to Type 2SB503.

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Datasheet Specifications

Part number: 2SD103
Manufacturer: Inchange Semiconductor
File Size: 211.44 KB
Datasheet: 2SD103_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector Curre

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2SD103 Silicon NPN Power Transistors Inchange Semiconductor

Inchange Semiconductor 2SD103-like datasheet