2SD103 - Silicon NPN Power Transistors
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) *High Power Dissipation- : PC= 25W(Max)@TC=25℃ *Complement to Type 2SB503 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for audio power amplifier, power switchi
