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2SD103

Silicon NPN Power Transistors

2SD103 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min)
*High Power Dissipation- : PC= 25W(Max)@TC=25℃
*Complement to Type 2SB503
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for audio power amplifier, power switchi.

2SD103 Datasheet (211.44 KB)

Preview of 2SD103 PDF

Datasheet Details

Part number:

2SD103

Manufacturer:

Inchange Semiconductor

File Size:

211.44 KB

Description:

Silicon npn power transistors.

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2SD103 Silicon NPN Power Transistors Inchange Semiconductor

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