2SD1044 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain : hFE= 700(Min. High Collector-Emitter Breakdown Voltage- : V(BR) CEO= 80V(Min). Wide Area of Saf.

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Datasheet Specifications

Part number: 2SD1044
Manufacturer: Inchange Semiconductor
File Size: 219.38 KB
Datasheet: 2SD1044_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous

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2SD1044 Silicon NPN Darlington Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1044-like datasheet