* Large current capacitance.
* Wide ASO and high durability against breakdown.
* Adoption of MBIT process. Specifications ( ) : 2SB817C Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Cur
2SD1047C Datasheet (209.75 KB)
2SD1047C
Sanyo
209.75 KB
Npn triple diffused planar silicon transistor.
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Ordering number : ENA0188
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2SB817C / 2SD1047C
2SB817C / 2SD1047C
PNP Epitaxial Planar Silicon Transistor NPN.
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