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2SD1047E - NPN Transistor

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Part number 2SD1047E
Manufacturer INCHANGE
File Size 201.79 KB
Description NPN Transistor
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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) Good Linearity of hFE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICP PC TJ Collector-Base Voltage Collector-Emitter Voltage

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