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2SD1022 - NPN Transistor

2SD1022 Description

isc Silicon NPN Darlington Power Transistor 2SD1022 .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min). High DC Current Gain : hFE= 1500(Min) @IC= 3A. Low Saturation Voltage.

2SD1022 Applications

* Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-

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Datasheet Details

Part number
2SD1022
Manufacturer
INCHANGE
File Size
208.24 KB
Datasheet
2SD1022-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1022-like datasheet