2SD1037 Datasheet - INCHANGE

2SD1037, NPN Transistor

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device per.

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2SD1037-INCHANGE.pdf

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Datasheet Details

Part number:

2SD1037

Manufacturer:

INCHANGE

File Size:

209.32 KB

Description:

NPN Transistor

Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipat

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2SD1037 NPN Transistor INCHANGE

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