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2SD1037 NPN Transistor

2SD1037 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min). Good Linearity of hFE. Minimum Lot-to-Lot variations for robust device per.

2SD1037 Applications

* Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipat

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Datasheet Details

Part number
2SD1037
Manufacturer
INCHANGE
File Size
209.32 KB
Datasheet
2SD1037-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD1037-like datasheet