2SD1031 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2. 100.

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Datasheet Specifications

Part number: 2SD1031
Manufacturer: INCHANGE
File Size: 183.61 KB
Datasheet: 2SD1031-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Col

2SD1031 Distributors

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2SD1031 NPN Transistor INCHANGE

INCHANGE 2SD1031-like datasheet