Datasheet4U Logo Datasheet4U.com

2SD1031 NPN Transistor

2SD1031 Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2. 100.

2SD1031 Applications

* Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Col

📥 Download Datasheet

Preview of 2SD1031 PDF
datasheet Preview Page 2

Datasheet Details

Part number
2SD1031
Manufacturer
INCHANGE
File Size
183.61 KB
Datasheet
2SD1031-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • 2SD103 - Silicon NPN Power Transistors (Inchange Semiconductor)
  • 2SD1030 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1032 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • 2SD1032A - Si NPN Transistor (Panasonic Semiconductor)
  • 2SD1033 - NPN Transistor (NEC)
  • 2SD1034A - NPN Transistor (Toshiba)
  • 2SD1000 - NPN TRANSISTOR (NEC)
  • 2SD1001 - NPN TRANSISTOR (NEC)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD1031-like datasheet