2SD1031 - NPN Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 4A *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power ampli
