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2SD1032 Datasheet - Inchange Semiconductor

2SD1032 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *Large Collector Power Dissipation *Complement to Type 2SB812 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for AF power amplifier applications. ABSOLUTE MAXIM.

2SD1032_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD1032

Manufacturer:

Inchange Semiconductor

File Size:

217.61 KB

Description:

Silicon npn power transistor.

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2SD1032 2SD1032 Silicon NPN Power Transistor Inchange Semiconductor

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