2SD1032 Datasheet, Transistor, Inchange Semiconductor

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2SD1032

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)

Large Collector Power Dissipation

Complement to

2SD1032 Application

• Applications
• Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collect

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2SD1032

Inchange Semiconductor

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