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2SD1032

Silicon NPN Power Transistor

2SD1032 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min)
*Large Collector Power Dissipation
*Complement to Type 2SB812
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for AF power amplifier applications. ABSOLUTE MAXIM.

2SD1032 Datasheet (217.61 KB)

Preview of 2SD1032 PDF

Datasheet Details

Part number:

2SD1032

Manufacturer:

Inchange Semiconductor

File Size:

217.61 KB

Description:

Silicon npn power transistor.

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2SD1032 Silicon NPN Power Transistor Inchange Semiconductor

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