2SD1032 - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Large Collector Power Dissipation Complement to Type 2SB812 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for AF power amplifier applications.

Inchange Semiconductor

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Datasheet Details

Part number	2SD1032
Manufacturer	Inchange Semiconductor
File Size	217.61 KB
Description	Silicon NPN Power Transistor
Datasheet	2SD1032 Datasheet
Additional preview pages of the 2SD1032 datasheet.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Large Collector Power Dissipation ·Complement to Type 2SB812 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1032 isc website：www.iscsemi.

Published: Oct 31, 2013 |