2SD1118 - Silicon NPN Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain- : hFE= 300V(Min.) @IC= 1A Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulato

Inchange Semiconductor

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Datasheet Details

Part number	2SD1118
Manufacturer	Inchange Semiconductor
File Size	209.13 KB
Description	Silicon NPN Power Transistor
Datasheet	2SD1118 Datasheet
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isc Silicon NPN Power Transistor 2SD1118 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High DC Current Gain- : hFE= 300V(Min.

Published: Dec 26, 2013 |