Datasheet4U Logo Datasheet4U.com

2SD1118 Silicon NPN Power Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor 2SD1118 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). High DC Current Gain- : hFE= 300V(Min. Low Collector Saturation Volt.

📥 Download Datasheet

Preview of 2SD1118 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD1118
Manufacturer
Inchange Semiconductor
File Size
209.13 KB
Datasheet
2SD1118_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Switching regulators
* DC-DC converter
* Solid sate relay
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 15 V IC Collector

2SD1118 Distributors

📁 Related Datasheet

  • 2SD111 - Silicon NPN Power Transistor (INCHANGE)
  • 2SD1110 - NPN Transistor (INCHANGE)
  • 2SD1111 - NPN TRANSISTOR (Sanyo Semicon Device)
  • 2SD1113K - NPN TRANSISTOR (Hitachi Semiconductor)
  • 2SD1114 - NPN Transistor (INCHANGE)
  • 2SD1115 - NPN Transistor (INCHANGE)

📌 All Tags

Inchange Semiconductor 2SD1118-like datasheet