2SD1154 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number: 2SD1154
Manufacturer: Inchange Semiconductor
File Size: 207.03 KB
Datasheet: 2SD1154_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for horizontal deflection output for B/W TV set. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Curr

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Silicon NPN Power Transistor Inchange Semiconductor

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