Datasheet Details
- Part number
- 2SD1157
- Manufacturer
- Inchange Semiconductor
- File Size
- 209.25 KB
- Datasheet
- 2SD1157_InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
2SD1157 Description
isc Silicon NPN Power Transistor 2SD1157 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min).
High DC Current Gain-
: hFE= 250V(Min.
Low Collector Saturation Vo.
2SD1157 Applications
* Switching regulators
* DC-DC converter
* Solid sate relay
* General purpose power amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector
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