2SD1157 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor 2SD1157 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min). High DC Current Gain- : hFE= 250V(Min. Low Collector Saturation Vo.

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Datasheet Specifications

Part number: 2SD1157
Manufacturer: Inchange Semiconductor
File Size: 209.25 KB
Datasheet: 2SD1157_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Switching regulators
* DC-DC converter
* Solid sate relay
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 10 V IC Collector

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2SD1157 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SD1157-like datasheet